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LED Dot Matrix Display Specifications | Thực tập cơ bản | Trường Đại học Bách khoa Hà Nội

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B
B
R
R
I
I
G
G
H
H
T
T
L
L
E
D
E
E
L
L
E
E
C
C
T
T
R
R
O
O
N
N
I
I
C
C
S
S
C
C
O
O
R
R
P
P
.
.
B
B
M
M
-
-
1
1
1
1
E
E
G
G
8
8
8
8
N
N
I
I
Ver.1.0 Page 1 of 3
SINCE 1981
● Package Dimensions :
3.0(.118) MIN.
37.9(1.492)
0.50(.020)
2.54x11=27.94(1.1)
PIN1.
28.2(1.110)
37.9(1.492)
10.30(.406)
3.7(.146)
Notes:
1. All dimensions are in millimeters(inches).
2. Tolerance is ±0.25mm(.01")unless otherwise
specified.
3. Specifications are subject to change without
notice.
● Features :
1. 1.496 inch (38.00mm) matrix height.
2. Dot size 3.7mm.
3. Low power requirement.
4. Excellent characters appearance.
5. Solid state reliability.
6. Multiplex drive , column cathode com.
and row anode com.
7. Duple color available.
8. Categorized for luminous intensity.
9. Stackable vertically and horizontally.
● Description :
1. The BM-11EG88NI is a 38mm (1.5")
matrix height 8×8 dot matrix display.
2. This product use hi-eff red chips and green
chips, the hi-eff red chips are made from
GaAsP on GaP substrate, the green chips
are made from GaP on GaP substrate.
3. This product have a gray face and
white dots.
●
●
●
●● Internal Circuit Diagram :
B
B
R
R
I
I
G
G
H
H
T
T
L
L
E
D
E
E
L
L
E
E
C
C
T
T
R
R
O
O
N
N
I
I
C
C
S
S
C
C
O
O
R
R
P
P
.
.
B
B
M
M
-
-
1
1
1
1
E
E
G
G
8
8
8
8
N
N
I
I
Ver.1.0 Page 2 of 3
SINCE 1981
● Absolute Maximum Ratings(Ta=25
℃
℃
℃
℃℃)
Parameter Symbol Hi-Eff Red Green Unit
Power Dissipation Per Dot Pd 80 80 mW
Forward Current Per Dot I
F
30 30 mA
Peak Forward Current Per Dot
I
FP
(
Dut
y
1/10, 1KHZ
)
150 150 mA
Reverse Voltage Per Dot V
R
5 V
Operating Temperature Topr
-40℃~80℃
-
Storage Temperature Tstg
-40℃~85℃
-
Soldering Temperature
(1/16" From Body)
Tsol -
260℃ For 5 Seconds
● Electrical And Optical Characteristics(Ta=25
℃
℃
℃
℃℃)
Hi-Eff Red
Parameter Symbol Condition Min. Typ. Max. Unit
Forward Voltage Per Dot V
F
I
F
=10mA - 1.9 2.5 V
Luminous Intensity Per Dot Iv I
F
=10mA - 10.0 - mcd
Reverse Current Per Dot I
R
V
R
=5V - - 100 µA
Peak Wave Length
λp
I
F
=10mA - 640 - nm
Dominant Wave Length
λd
I
F
=10mA 626 - 636 nm
Spectral Line Half-width
∆λ
I
F
=10mA - 40 - nm
Green
Parameter Symbol Condition Min. Typ. Max. Unit
Forward Voltage Per Dot V
F
I
F
=10mA - 2.1 2.5 V
Luminous Intensity Per Dot Iv I
F
=10mA - 10.0 - mcd
Reverse Current Per Dot I
R
V
R
=5V - - 100 µA
Peak Wave Length
λp
I
F
=10mA - 568 - nm
Dominant Wave Length
λd
I
F
=10mA 569 - 574 nm
Spectral Line Half-width
∆λ
I
F
=10mA - 30 - nm
B
B
R
R
I
I
G
G
H
H
T
T
L
L
E
D
E
E
L
L
E
E
C
C
T
T
R
R
O
O
N
N
I
I
C
C
S
S
C
C
O
O
R
R
P
P
.
.
B
B
M
M
-
-
1
1
1
1
E
E
G
G
8
8
8
8
N
N
I
I
Ver.1.0 Page 3 of 3
SINCE 1981
● Typical Electro-Optical Characteristics Curves
(25℃ Ambient Temperature Unless Otherwise Noted)
Fig.1 Relative Radiant Intensity VS. Wavelength
Wavelength(nm)
Forward Voltage
Fig.4 Relative Luminous
Forward Current(mA)
Forward Voltage (V)
Relative Luminous Intensity
0.0
0
(@20mA)
1.0
2.0
Forward Current (mA)
3.0
0
30
10
20
40
50
4010 20 30 50
(G)
(E)
Forward Current
4
Intensity VS.
1 2 3
(E)
(G)
5
Fig.2 Forward Current VS.
Relative Radiant Intensity
530
0
0.5
1.0
(G)
560 590
Ambient Temperature
Ambient Temperature
Derating Curve VS.
Fig.5 Forward Current
Ambient Temperature Ta( C)
Ambient Temperature Ta( C)
0
20
Forward Current(mA)
10
30
40
20 40 60 80
Relative Luminous Intensity
(@20mA)
0.5
50
-40
0
1.5
1.0
3.0
2.5
2.0
0-20 20
120100
40 60
Fig.3 Relative Luminous
620 650
Intensity VS.
680 710
(E)

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BRIGHT LED ELECTRONICS CORP. SINCE 1981 BM-11EG88NI ● Features : ● Package Dimensions : 1.
1.496 inch (38.00mm) matrix height. 2. Dot size 3.7mm. 3. Low power requirement. 37.9(1.492) 28.2(1.110) 4.
Excellent characters appearance. 5. Solid state reliability. 6.
Multiplex drive , column cathode com. PIN1. 37.9(1.492) 3.7(.146) and row anode com. 7. Duple color available. 10.30(.406) 8.
Categorized for luminous intensity. 0.50(.020) 9.
Stackable vertically and horizontally. 2.54x11=27.94(1.1) 3.0(.118) MIN. ● Description : 1.
The BM-11EG88NI is a 38mm (1.5") Notes: 1.
All dimensions are in millimeters(inches).
matrix height 8×8 dot matrix display. 2.
Tolerance is ±0.25mm(.01")unless otherwise 2.
This product use hi-eff red chips and green specified.
chips, the hi-eff red chips are made from 3.
Specifications are subject to change without
GaAsP on GaP substrate, the green chips notice.
are made from GaP on GaP substrate. 3.
This product have a gray face and white dots.
● Internal Circuit Diagram : Ver.1.0 Page 1 of 3
BRIGHT LED ELECTRONICS CORP. SINCE 1981 BM-11EG88NI
● Absolute Maximum Ratings(Ta=25℃) Parameter Symbol Hi-Eff Red Green Unit Power Dissipation Per Dot Pd 80 80 mW Forward Current Per Dot IF 30 30 mA I Peak Forward Current Per Dot FP 150 150 mA (Duty 1/10, 1KHZ) Reverse Voltage Per Dot VR 5 V Operating Temperature Topr -40℃~80℃ - Storage Temperature Tstg -40℃~85℃ - Soldering Temperature Tsol 260℃ For 5 Seconds - (1/16" From Body)
● Electrical And Optical Characteristics(Ta=25℃) Hi-Eff Red Parameter Symbol Condition Min. Typ. Max. Unit Forward Voltage Per Dot VF IF=10mA - 1.9 2.5 V Luminous Intensity Per Dot Iv IF=10mA - 10.0 - mcd Reverse Current Per Dot IR VR=5V - - 100 µA Peak Wave Length λp IF=10mA - 640 - nm Dominant Wave Length λd IF=10mA 626 - 636 nm Spectral Line Half-width ∆λ IF=10mA - 40 - nm Green Parameter Symbol Condition Min. Typ. Max. Unit Forward Voltage Per Dot VF IF=10mA - 2.1 2.5 V Luminous Intensity Per Dot Iv IF=10mA - 10.0 - mcd Reverse Current Per Dot IR VR=5V - - 100 µA Peak Wave Length λp IF=10mA - 568 - nm Dominant Wave Length λd IF=10mA 569 - 574 nm Spectral Line Half-width ∆λ IF=10mA - 30 - nm Ver.1.0 Page 2 of 3
BRIGHT LED ELECTRONICS CORP. SINCE 1981 BM-11EG88NI
● Typical Electro-Optical Characteristics Curves
(25℃ Ambient Temperature Unless Otherwise Noted)
Fig.1 Relative Radiant Intensity VS. Wavelength (G) (E) 1.0 ity s n te t In n ia d 0.5 a R e tiv la e R 0 530 560 590 620 650 680 710 Wavelength(nm) Fig.3 Relative Luminous Fig.2 Forward Current VS. Intensity VS. Forward Voltage Ambient Temperature 50 3.0 (E) ity s (G) n ) 2.5 40 A te In s 2.0 t (m 30 u n o 1.5 rre in u 20 m u C L ) 1.0 rd e A a 10 m tiv 0 0.5 rw la 2 o e F 0 R (@ 0 1 2 3 4 5 -40 -20 0 20 40 60 Forward Voltage (V) Ambient Temperature Ta( C) Fig.4 Relative Luminous Fig.5 Forward Current Intensity VS. Derating Curve VS. Forward Current Ambient Temperature 3.0 50 sity n te ) 40 In (G) A s u 2.0 o t(m 30 (E) n in m rre u u 20 L ) 1.0 C e A rd tiv m 0 a 10 la 2 e rw o R (@ 0.0 F 0 0 10 20 30 40 50 20 40 60 80 100 120 Forward Current(mA) Ambient Temperature Ta( C) Ver.1.0 Page 3 of 3

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